Numerical simulation of high temperature effects on SOI mosfets

• Main Author: Goh, June Mei Hui.
• Other Authors: Zhou Xing
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/49464
• Institution: Nanyang Technological University

This project is aimed to use Taurus workbench to perform process simulation and device simulation. In this project, MEDICI is used to perform device simulation under high temperature operation. Device parameters are obtained from the simulator to analyze the behavior under high temperature operation using MEDICI. Parameters obtained are analyzed using theoretical model. Calibration of the simulator to match experimental data is used to confirm the use of simulation data to represent device behavior. From device modeling and calibration, MEDICI simulator is familiarized. In addition to device simulation, process simulation is also conducted to familiarize with TSUPREM4. Main focus in this process simulation is on channel length variation and lightly doped drain concentration variation. This project has exposed the student with SOI MOSFET characteristic and process procedure. In addition to that, the project has also exposed the student with threshold voltage extraction method.