Measurements of semiconductor solar structures

• Main Author: Lim, Anne Hong Ting.
• Other Authors: Yoon Soon Fatt
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/49559
• Institution: Nanyang Technological University

With the depletion of fossils fuel, there is an increasing emphasis on solar energy. However, low efficiency has been produced by the single-junction solar cell. Multi-junction solar cells are developed to produce more power with high efficiency. This report will look into the measurement analysis of how the efficiency of the current triple junction solar cell would improve by making use of 1eV subcell.Light biasing different subcell based on their bandgap will cause maximum rate of absorption to occur. It will help determine the limiting factor affecting the overall efficiency of each solar cell. The responsive and quantum efficiency on the different solar cell types of p-n junctions will be investigated to gauge the performance of the 1eV under light bias. Knowing the causes will allow suitable optimisation to be carried out for each subcell at its dual or triple junction to ensure high and good quality performance of solar cell. This would better increase the success rate when implementing and growing the quadrant junction cell consisting GaInP, GaAs, 1eV and Ge.