Investigation on photoelectric property of carbon-doped ZnO in visible-light range

• Main Author: Lim, Qiu Qiang.
• Other Authors: Du Hejun
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Mechanical engineering
• Online Access: http://hdl.handle.net/10356/49785
• Institution: Nanyang Technological University

The technology and method of doping effect has been in favor and experimented in recent years of research with an intense discovery towards the impact and changes of the atomic properties. Semiconductor, in particular to ZnO, has attracted researcher’s interest in development towards electronics and optoelectronics product due to the demand of smaller and lighter device for the users and environment. The unique property of ZnO holds a wide direct energy bandgap of 3.37eV and a large exciton binding energy of 60meV at room temperature which is deemed to be the semiconductor rising star for the future. The applications ZnO includes solar cells, light emitted diodes and ultra violet laser which potentially provide us with higher efficiency and prolonging the environment. The project is primarily aim to investigate the photoelectric properties of a Zinc-Oxide (ZnO) atomic material with a direct replacement of Carbon (C) with the presence of Oxygen (O) through the means of doping via Thermal Chemical Vapor Deposition (TCVD). Developed specimen will undergoes Scan Electron Microscope for further analysis of the nanorods and the uniformity of the growth. Besides visual analysis conducted, photoelectric properties of the specimen are carried out by passing electric across under different lighting conditions which illustrates the reactivity through the degree of lenses.