Graphene field effect transistor photodetector fabrication and investigation

Graphene is a two-dimensional sheet of carbon atoms in a hexagonal honeycomb lattice structure through sp2 bonding has attracted much attention. Since the recent discovery of graphene by mechanical exfoliation of high purity graphite in 2004, intensive research has been devoted to this unique materi...

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Main Author:	Deng, Qinfei
Other Authors:	School of Electrical and Electronic Engineering
Format:	Final Year Project
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/50164
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-50164
record_format	dspace
spelling	sg-ntu-dr.10356-501642023-07-07T17:46:55Z Graphene field effect transistor photodetector fabrication and investigation Deng, Qinfei School of Electrical and Electronic Engineering Wang Qijie DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Graphene is a two-dimensional sheet of carbon atoms in a hexagonal honeycomb lattice structure through sp2 bonding has attracted much attention. Since the recent discovery of graphene by mechanical exfoliation of high purity graphite in 2004, intensive research has been devoted to this unique material. It is considered to be used as a promising candidate of electronic material, due to its unique electronic properties given by its lattice structure. Ultrahigh electron mobility of up to 200,000cm2V-1s-1 has been reported. Bachelor of Engineering 2012-05-30T07:11:14Z 2012-05-30T07:11:14Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50164 en Nanyang Technological University 67 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Deng, Qinfei Graphene field effect transistor photodetector fabrication and investigation
description	Graphene is a two-dimensional sheet of carbon atoms in a hexagonal honeycomb lattice structure through sp2 bonding has attracted much attention. Since the recent discovery of graphene by mechanical exfoliation of high purity graphite in 2004, intensive research has been devoted to this unique material. It is considered to be used as a promising candidate of electronic material, due to its unique electronic properties given by its lattice structure. Ultrahigh electron mobility of up to 200,000cm2V-1s-1 has been reported.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Deng, Qinfei
format	Final Year Project
author	Deng, Qinfei
author_sort	Deng, Qinfei
title	Graphene field effect transistor photodetector fabrication and investigation
title_short	Graphene field effect transistor photodetector fabrication and investigation
title_full	Graphene field effect transistor photodetector fabrication and investigation
title_fullStr	Graphene field effect transistor photodetector fabrication and investigation
title_full_unstemmed	Graphene field effect transistor photodetector fabrication and investigation
title_sort	graphene field effect transistor photodetector fabrication and investigation
publishDate	2012
url	http://hdl.handle.net/10356/50164
_version_	1772828917043822592

Graphene field effect transistor photodetector fabrication and investigation

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