Field-effect transisstors based on reduced graphene oxide for chemical and biological detection

• Main Author: He, Qiyuan.
• Other Authors: Zhang Hua
• Format: Theses and Dissertations
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Nanotechnology
• Online Access: http://hdl.handle.net/10356/50936
• Institution: Nanyang Technological University

Graphene have showing great performance in electronic sensing for various chemicals and biomolecules. In particular, reduced graphene oxide (rGO)-based electronic sensors offer several key advantages, such as low cost, large yield, and high reproducibility. First, a low-cost method based on microfluidics is developed for the fabrication of rGO thin film on various substrates. The resulting rGO micropatterns were used as channel in solution-gated field-effect transistors (FETs), and used for electronic sensing. Second, the micropatterned rGO channel was chemically functionalized with metallothionein type II, and used to detect Hg2+ ions. Third, alternatively, the Langmuir-Blodgett (LB) method was used to fabricate rGO-based thin-film transistors (TFTs) and used to detect the hybridization of target ssDNA in nanomole scale in real time. Fourth, by combining two solution processes, an all-rGO TFT with rGO film as electrodes and rGO micropatterns as channel was developed. Lastly, a TFT based on novel two-dimensional material (MoS2) as channel was developed and used as toxic gas sensor.