Li, Y., & Zhang Shanyong, S. (2008). Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application.
استشهاد بنمط شيكاغوLi, Yibin, و Sam Zhang Shanyong. Development of Sputtered SrBi2Ta2O9 Thin Films for Nonvolatile Random Access Memory Application. 2008.
MLA استشهادLi, Yibin, و Sam Zhang Shanyong. Development of Sputtered SrBi2Ta2O9 Thin Films for Nonvolatile Random Access Memory Application. 2008.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.