Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance again...

Full description

Saved in:
Bibliographic Details
Main Author: Li, Yibin
Other Authors: Zhang Shanyong, Sam
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/5277
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University

Internet

https://hdl.handle.net/10356/5277

Similar Items