Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

• Main Author: Li, Yibin
• Other Authors: Zhang Shanyong, Sam
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/5277
• Institution: Nanyang Technological University

Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance again...