Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

• المؤلف الرئيسي: Li, Yibin
• مؤلفون آخرون: Zhang Shanyong, Sam
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/5277

Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance again...