Modeling of electron transport in phrosphorous doped single crystal CVD diamond
Diamond as wide band gap material with extreme electrical and mechanical properties has huge potential for high voltage, high power, high speed, and high temperature power devices. Various p-type diamond devices have been achieved using Boron doping with 0.37 eV ionization energy and hole transport...
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2013
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| 在線閱讀: | http://hdl.handle.net/10356/53079 |
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| 機構: | Nanyang Technological University |
| 語言: | English |