A Low Drop-out (LDO) regulator in SOI-CMOS technology for high temperature application

• Main Author: Lim, Hwee Yeng.
• Other Authors: Goh Wang Ling
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/54510
• Institution: Nanyang Technological University

With technology development advancing towards low voltage application and coupled with the increasing demand for System-on-Chip (SoC) integration, Low Drop-out (LDO) regulators have gained popularity with the increasing demand for portable electronics, i.e. cellular phones, and other hand-held devices as compared to conventional linear voltage regulators. With the use of 1.0 um SOI-CMOS technology, this report will focus on the designing process of the LDO voltage regulator for high temperature applications. The aim of this project is to design a linear voltage regulator that has an output voltage of precise 5 V (< 1% inaccuracy). The voltage regulator is also expected to operate through a range of temperature of 0 to 300 Degree Celsius. This report will also include fundamental knowledge of linear voltage regulators, as well as various topologies and existing techniques used for the designing of LDO. Lastly, recommendations for future works on the proposed LDO design will be discussed.