Design and analysis of ultra-robust analog library cells for aerospace applications
Ionizing radiation, such as high energy electromagnetic radiation and particle radiation, has an impact to the integrated circuit using commercial CMOS process which is susceptible to damage or malfunction caused by radiation effects. This makes it very challenging for integrated circuit de...
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Format: | Final Year Project |
Language: | English |
Published: |
2013
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Online Access: | http://hdl.handle.net/10356/54523 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Ionizing radiation, such as high energy electromagnetic radiation and particle radiation,
has an impact to the integrated circuit using commercial CMOS process which is
susceptible to damage or malfunction caused by radiation effects. This makes it very
challenging for integrated circuit design applied to the outer space, nuclear reactor or
other radiation environment. However, due to the development of the CMOS technology,
deep submicron device with ultra-thin silicon oxide has a great resistance towards the
ionizing radiation. Moreover, Radiation Hardened techniques such as shielding, using
insulating substrate instead of usual semiconductor wafers, are applied to enhance
robustness under the radiation effect. Radiation Hardened by design, in another way,
provides the solution through circuit schematic design which will be the main concern in
this work.
Digital to Analog Converter (DAC) is a device that converts digital signal to analog
signal and widely used in the generation of audio/video signals. DAC is an essential
block for building the integrated circuit. Under radiation environment, the performance
of the DAC is affected and output signal suffers continuous or transient distortion. Thus
a RHDB DAC is required in order to be used in the radiation environment.
In this project, a RHDB DAC topology is proposed. The circuit is designed using 65nm
GlobalFoundries with low power supply of 1.2V. Two essential building blocks of DAC,
bandgap reference and amplifier, are designed with radiation tolerance and ability to
work under large temperature variation. The bandgap reference has a temperature
coefficient less than 50ppm/ ˚C within 40 ˚C to 125 ˚C, a Power Supply Rejection Ratio
(PSRR) higher than 60dB at DC condition and power consumption less than 150μW. The
amplifier has an open loop gain of 78dB, a bandwidth of 80MHz and phase margin more
than 70 degree.
In conclusion, the performance and features of the proposed design fulfill the requirement of
the aerospace application. |
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