Carbon-semiconductor hybrid nanostructures and their photoresponse behaviors
Carbon nanomaterials (including carbon nanotube and graphene) and semiconductor nanoparticles have attracted considerable research effort in past two decades in terms of both fundamental and application research. Semiconductor nanoparticles have large optical absorption cross-sections and t...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2013
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Online Access: | http://hdl.handle.net/10356/54778 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Carbon nanomaterials (including carbon nanotube and graphene) and semiconductor
nanoparticles have attracted considerable research effort in past two decades in terms
of both fundamental and application research. Semiconductor nanoparticles have large
optical absorption cross-sections and tenable electronic properties. Carbon
nanomaterials are unique in terms of structure, carbon nanotube (CNT) bears a hollow
one-dimensional structure; and graphene is an one-atom-thick sheet and has extremely
high specific surface area; both of them are presenting excellent charge transport
capability. The combination of them will provide an ideal model for nanoscale
optoelectronic devices. The key step in the operation of this kind of hybrid
optoelectronic devices is the interfacial charge transfer between carbon nanomaterials
and semiconductors nanoparticles. The fast transfer and transport of charge will help to
separate bound excitons (electron-hole pairs generated by light excitation), and
suppress the recombination.
Basing on the understanding on excitonic solar cells, the diffusion length of exciton is
only in a range less than 100 nm before energy quenching; thus it is very important to
dissociate the exciton effectively before recombination.' A hybrid nanostructure is
extremely beneficial for exciton dissociation for following reasons. First, there is a builtin
electric field at the interfacial area, which helps to separate the bound exciton; then,
the hybrid nanostructure bears an extremely high interfacial area which provides
countless sites for exciton dlssoclation." According to the understanding on electrons transport in nanoparticle structures, under illumination, the photogenerated electrons
repeatedly interact with a distribution of traps as they undertake a random hopping
through the nanoparticles. A photogenerated electron may experience a million
trapping events before being collected by electrode." The longer transporting time in
nanoparticles will increase the possibility of recombination. Thus, if the exciton is
separated at the interfacial area of the hybrid nanostructure, with one kind of
charge{electron or hole) injected into a better transport pathway, say, carbon
nanomaterial, it will transport to the collecting electrode very fast, lowering the
possibility of recombination. Thus the recombination is not a dominant problem in
hybrid nanostructures. In this thesis, we utilized facile methods to synthesize several
typical carbon-semiconductor hybrid nanostructures. We will investigate the charge
transfer mechanisms in the hybrid materials by studying their photoresponse behaviors.
We first studied the photoresponse behavior of multiwalled carbon nanotube-Zinc
Oxide (MWNT-ZnO) hybrid nanostructures and charge transfer mechanism. Based on
the mechanism, conversion of conductance from n-typed to p-typed is realized. The
conductance of the hybrids could be strongly tuned by the amount of ZnO loading: in
the case of shorter deposition time or fewer ZnO nanoparticles (NPs), the
photogenerated electrons in ZnO transfer into the MWNT, resulting in a decrease in
conductance of MWNT-ZnO hybrids; While in the case of longer deposition time or
more ZnO NPs, the photogenerated electrons will not only decrease the conductance of
holes in the MWNT matrix, but also convert the conductance of hybrids from p-typed to
n-typed. A device structure based on another hybrid system, MWNT-CuS, was then designed to study the charge transfer behaviors. By using an asymmetrical contact
structure, the hybrid devices present significant rectification in I-V curves, and show
predominant photoresponse to light illumination. The strong photoresponse to light
illumination is a result of dissociation of photogenerated excitons by the built-in electric
field across the Schottky junctions at the MWNT/CuS interfaces due to the intimate
contact resulted from in situ synthesis. The asymmetrical contacts provide transport
loops for both electrons and holes. Finally the charge transfer and photoresponse
behaviors in reduced graphene oxide-ZnO (rGO-ZnO) hybrid nanostructures were
investigated in detail. Under visible light illumination, a significant zero-bias
photocurrent was observed in rGO-ZnO hybrids device. This photocurrent could be
attributed to the fast charge transfer at rGO-ZnO interfaces, effective charge transport
in rGO sheets, and continuous adsorption and desorption of ionized surface oxygen. The
work function difference (Fermi energy) between the ZnO and rGO provides the driving
force for charge separation.
The charge-transfer phenomenon in these hybrid nanostructures demonstrates the
carrier separation capability for optoelectronic devices. This investigation of charge
transfer behavior in carbon nanomaterials based hybrid nanostructures will provide
knowledge for the design of high performance optoelectronics devices, such as solar
cells, photodetectors and so on. |
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