Transition metal oxide based resistive RAM for high density non-vilatile memory
Nonvolatile memory technology (NVM) is one of the key driving factors for information storage development. With memory technology aggressively migrating into the sub-10 nm nano-scale regime, the traditional nonvolatile FLASH memory is facing challenging issues such as lithography, coupling ratio, cr...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/54826 |
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| Institution: | Nanyang Technological University |
| Language: | English |