Transition metal oxide based resistive RAM for high density non-vilatile memory
Nonvolatile memory technology (NVM) is one of the key driving factors for information storage development. With memory technology aggressively migrating into the sub-10 nm nano-scale regime, the traditional nonvolatile FLASH memory is facing challenging issues such as lithography, coupling ratio, cr...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/54826 |
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| 機構: | Nanyang Technological University |
| 語言: | English |