Bandgap engineering of monolayer molybdenum disulfide by oxygen plasma
Monolayer Molybdenum Disulfide (MoS2) has been a favourable candidate for next generation high performance semiconducting devices due to the presence of a direct bandgap. Bandgap engineering of monolayer MoS2 could lead to many new applications and functionalities in the field of optoelectronics by...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/55107 |
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| Institution: | Nanyang Technological University |
| Language: | English |