Low power SRAM-PUF with improved reliability & uniformity utilizing aging impact for security improvement

• Main Author: Garg, Achiranshu
• Other Authors: Kim Tae Hyoung, Tony
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
• Online Access: https://hdl.handle.net/10356/55937
• Institution: Nanyang Technological University

Hardware Intrinsic Security (HIS) is currently a very crucial aspect of the electronics industry aimed towards protecting hardware IPs from infringement. Also, Wireless Sensor Nodes (WSNs) that are increasingly acting as a backbone to the information channels need a secure and low-power encryption system to protect them from malicious attacks. Traditional electronic devices store encrypted keys in battery-powered volatile memories or use Non-Volatile Memories for permanent storage of security keys. These are not very secure since the security key is exposed and relatively easy to hack from Non-Volatile Memory (NVM). Additionally, it comparatively consumes more power for operating over a long period of time. Thus, SRAM-PUF can provide a viable solution to both the problems - secure encryption & minimal power consumption.