A study of the electronic properties of III-V compound semiconductor integrated with silicon

• المؤلف الرئيسي: Chen, Kah Pin
• مؤلفون آخرون: Yoon Soon Fatt
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/60691
• المؤسسة: Nanyang Technological University

This thesis presents systematic studies on monolithic heteroepitaxial integration of III-V compound semiconductor on Si substrate employing the graded Si1-xGex buffer layer. One of the essential growth procedures for antiphase boundary free GaAs/Ge growth is the pre-growth high-temperature in-situ a...