Growth and characterization of III-V quantum dots on SI-based substrate
This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower thr...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/61068 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |