Synthesis and optical properties of GaN nanowires
We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth condition has been changed to gain the best results. PL and Raman spectroscopy has been used to study the optical properties of GaN nanowires.To further investigate the promising optical properties of GaN...
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sg-ntu-dr.10356-620652023-02-28T23:19:47Z Synthesis and optical properties of GaN nanowires Chen, Xiaoxuan Xiong Qihua School of Physical and Mathematical Sciences DRNTU::Science We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth condition has been changed to gain the best results. PL and Raman spectroscopy has been used to study the optical properties of GaN nanowires.To further investigate the promising optical properties of GaN wire, power dependent and temperature dependent photoluminescence measurement is conducted on a nanolaser made by InGaN/GaN multiple quantum well nanowire. The complex signal shows the competition carrier recombination mechanism between band-filling effect, screening of internal electric field by photogenerated carriers, inhomogeneity and carrier localization. Bachelor of Science in Physics 2015-01-10T03:59:43Z 2015-01-10T03:59:43Z 2014 2014 Final Year Project (FYP) http://hdl.handle.net/10356/62065 en 44 p. application/pdf |
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DRNTU::Science Chen, Xiaoxuan Synthesis and optical properties of GaN nanowires |
| description |
We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth condition has been changed to gain the best results. PL and Raman spectroscopy has been used to study the optical properties of GaN nanowires.To further investigate the promising optical properties of GaN wire, power dependent and temperature dependent photoluminescence measurement is conducted on a nanolaser made by InGaN/GaN multiple quantum well nanowire. The complex signal shows the competition carrier recombination mechanism between band-filling effect, screening of internal electric field by photogenerated carriers, inhomogeneity and carrier localization. |
| author2 |
Xiong Qihua |
| author_facet |
Xiong Qihua Chen, Xiaoxuan |
| format |
Final Year Project |
| author |
Chen, Xiaoxuan |
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Chen, Xiaoxuan |
| title |
Synthesis and optical properties of GaN nanowires |
| title_short |
Synthesis and optical properties of GaN nanowires |
| title_full |
Synthesis and optical properties of GaN nanowires |
| title_fullStr |
Synthesis and optical properties of GaN nanowires |
| title_full_unstemmed |
Synthesis and optical properties of GaN nanowires |
| title_sort |
synthesis and optical properties of gan nanowires |
| publishDate |
2015 |
| url |
http://hdl.handle.net/10356/62065 |
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1759858375921762304 |