Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT...
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sg-ntu-dr.10356-634162023-07-07T17:23:21Z Electric characterization and conduction mechanism of multi-functional thin films for electronic devices Keh, Chee Xuan Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment. Bachelor of Engineering 2015-05-13T06:55:04Z 2015-05-13T06:55:04Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/63416 en Nanyang Technological University 59 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Keh, Chee Xuan Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
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Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment. |
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Zhu Weiguang |
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Zhu Weiguang Keh, Chee Xuan |
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Final Year Project |
author |
Keh, Chee Xuan |
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Keh, Chee Xuan |
title |
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
title_short |
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
title_full |
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
title_fullStr |
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
title_full_unstemmed |
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
title_sort |
electric characterization and conduction mechanism of multi-functional thin films for electronic devices |
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2015 |
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http://hdl.handle.net/10356/63416 |
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1772826286961459200 |