Electric characterization and conduction mechanism of multi-functional thin films for electronic devices

Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT...

Full description

Saved in:
Bibliographic Details
Main Author: Keh, Chee Xuan
Other Authors: Zhu Weiguang
Format: Final Year Project
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/63416
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-63416
record_format dspace
spelling sg-ntu-dr.10356-634162023-07-07T17:23:21Z Electric characterization and conduction mechanism of multi-functional thin films for electronic devices Keh, Chee Xuan Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment. Bachelor of Engineering 2015-05-13T06:55:04Z 2015-05-13T06:55:04Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/63416 en Nanyang Technological University 59 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Keh, Chee Xuan
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
description Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment.
author2 Zhu Weiguang
author_facet Zhu Weiguang
Keh, Chee Xuan
format Final Year Project
author Keh, Chee Xuan
author_sort Keh, Chee Xuan
title Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_short Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_full Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_fullStr Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_full_unstemmed Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_sort electric characterization and conduction mechanism of multi-functional thin films for electronic devices
publishDate 2015
url http://hdl.handle.net/10356/63416
_version_ 1772826286961459200