A systematic and clean transfer method for 2D transition metal dichalcogenides materials and fabrication of 2D heterostructure

• Main Author: Cui, Xiaoyang
• Other Authors: Yu Ting
• Format: Final Year Project
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Chemistry
• Online Access: http://hdl.handle.net/10356/65836
• Institution: Nanyang Technological University

Studying of graphene like 2D materials is very intense and it is very likely to remain as one of the frontier research areas in materials sciences. Transferring of 2D materials onto target samples or substrates is essential for fundamental studies and potential applications. Conventional transfer technique usually involves chemical etch or high temperature annealing which are very likely to introduce surface discontinuity (holes and steps) and contaminations. Hence, the property of the transferred material will be greatly affected. We herein develop a novel transfer method of 2D materials which does not require chemical etch or high temperature annealing so that the property of the transferred material is enhanced. The transfer method is developed based on Prof. Zhang Hua’s work. In this paper, we have demonstrated the transfer of both mechanically exfoliated 2D material and CVD growth 2D materials onto target samples or substrates. The transfer process consists of lift-off of the materials on the substrate and the stamping process which transfer the lifted material to target sample or substrate. Photoluminescence measurement and Raman spectroscopy of the transferred 2D samples showed that the samples have high quality.