Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures
Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenide (MoSe2), and tungsten disulfide (WS2) and diselenide (WSe2) and their heterostructures have shown good performance in field effect transistors, optoelectronics and flexible devices. However, the lac...
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sg-ntu-dr.10356-664122023-07-04T16:36:04Z Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures Wang, Xingli Liu Zheng Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering DRNTU::Science Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenide (MoSe2), and tungsten disulfide (WS2) and diselenide (WSe2) and their heterostructures have shown good performance in field effect transistors, optoelectronics and flexible devices. However, the lack of the preparation of these monolayers and heterostructures with large area and high quality restrict their practical application. Chemical vapor deposition (CVD) has shown strength on the growth of various two dimensional materials, and are suitable to the growth of these transition metal dichalcogenide monolayers and heterostructures with large area and high quality. In this work, the growth of different monolayers (MoS2, MoSe2 and WS2) with CDV method is explored. And both vertical and lateral heterostructures based on MoS2 and WS2 monolayers have also been synthesized with CVD method as well. Raman, photoluminescence, scanning transmission electron microscopy and electrical transport measurement prove high quality of these CVD grown materials. DOCTOR OF PHILOSOPHY (EEE) 2016-04-05T05:59:00Z 2016-04-05T05:59:00Z 2016 Thesis Wang, X. (2016). Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/66412 10.32657/10356/66412 en 115 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering DRNTU::Science Wang, Xingli Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
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Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenide (MoSe2), and tungsten disulfide (WS2) and diselenide (WSe2) and their heterostructures have shown good performance in field effect transistors, optoelectronics and flexible devices. However, the lack of the preparation of these monolayers and heterostructures with large area and high quality restrict their practical application. Chemical vapor deposition (CVD) has shown strength on the growth of various two dimensional materials, and are suitable to the growth of these transition metal dichalcogenide monolayers and heterostructures with large area and high quality. In this work, the growth of different monolayers (MoS2, MoSe2 and WS2) with CDV method is explored. And both vertical and lateral heterostructures based on MoS2 and WS2 monolayers have also been synthesized with CVD method as well. Raman, photoluminescence, scanning transmission electron microscopy and electrical transport measurement prove high quality of these CVD grown materials. |
author2 |
Liu Zheng |
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Liu Zheng Wang, Xingli |
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Theses and Dissertations |
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Wang, Xingli |
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Wang, Xingli |
title |
Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
title_short |
Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
title_full |
Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
title_fullStr |
Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
title_full_unstemmed |
Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
title_sort |
growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures |
publishDate |
2016 |
url |
https://hdl.handle.net/10356/66412 |
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1772827529187426304 |