Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties

The use of organic/inorganic perovskite as the emission layer in optoelectronic application has attracted enormous interest due to combination of superior properties in inorganic materials (such as carrier diffusion length [1-3], high photoluminescence quantum efficiency[4]) and organic materials...

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Main Author: Anson
Other Authors: Nripan Mathews
Format: Final Year Project
Language:English
Published: 2016
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Online Access:http://hdl.handle.net/10356/66453
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-664532023-03-04T15:30:28Z Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties Anson Nripan Mathews School of Materials Science and Engineering Energetics Research Institute DRNTU::Engineering::Materials::Photonics and optoelectronics materials The use of organic/inorganic perovskite as the emission layer in optoelectronic application has attracted enormous interest due to combination of superior properties in inorganic materials (such as carrier diffusion length [1-3], high photoluminescence quantum efficiency[4]) and organic materials (such as tunable bandgap[5] , low defect densities[6] and low temperature solution processability[7]). Particularly in light-emitting application, there have been rapid developments in the recent years following the breakthrough where bright electroluminescence (364 cd.m-2 ) was reported to be achieved at room temperature through methylammonium lead halide (CH3NH3PbX3, X = I, Cl, Br) emission layer based lightemitting diode (LED) [8]. Many efforts have since been done to improve the performance, such as improvement on hole injection efficiency[9, 10] and perovskite layer uniformity[11-13] . Most recently, a remarkable maximum luminance (10590 cd.m-2 ) and external quantum efficiency (EQE) (0.48%) was demonstrated through the optimization in film uniformity[12] . This suggested the close connection between perovskite morphology and the performance of device. In this project, the correlation between CH3NH3PbBr3 morphology (particle size, thickness, and film coverage) and its opto-electronic properties has been investigated. Five different morphologies which were produced through different deposition conditions (variation in P123 surfactant (triblock poly(ethylene glycol)[PEG] - poly(propylene glycol)[PPG]-poly(ethylene glycol)[PEG]), CH3NH3PbBr3 concentration, toluene proportion, and anti-solvent (toluene) wash) has been characterized for their optical properties and electrical (device) performance. Optically, the samples with higher film coverage have shown significant increase in their absorption and emission intensity. This is attributable to the increase in CH3NH3PbBr3 active volume which participated in the optical activity. The device test has also shown improvement in CH3NH3PbBr3 electroluminescence performance due to lower defect (trap) sites and less electrical shunting loss, which is associated with bigger particles, higher film coverage and sufficient thickness. On the whole, morphological control of CH3NH3PbBr3 has been shown to result in considerable improvement in its opto-electronic properties. This finding provides insights for further improvement in the performance of perovskite based LED devices. Bachelor of Engineering (Materials Engineering) 2016-04-07T06:06:33Z 2016-04-07T06:06:33Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/66453 en Nanyang Technological University 48 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Photonics and optoelectronics materials
spellingShingle DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Anson
Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
description The use of organic/inorganic perovskite as the emission layer in optoelectronic application has attracted enormous interest due to combination of superior properties in inorganic materials (such as carrier diffusion length [1-3], high photoluminescence quantum efficiency[4]) and organic materials (such as tunable bandgap[5] , low defect densities[6] and low temperature solution processability[7]). Particularly in light-emitting application, there have been rapid developments in the recent years following the breakthrough where bright electroluminescence (364 cd.m-2 ) was reported to be achieved at room temperature through methylammonium lead halide (CH3NH3PbX3, X = I, Cl, Br) emission layer based lightemitting diode (LED) [8]. Many efforts have since been done to improve the performance, such as improvement on hole injection efficiency[9, 10] and perovskite layer uniformity[11-13] . Most recently, a remarkable maximum luminance (10590 cd.m-2 ) and external quantum efficiency (EQE) (0.48%) was demonstrated through the optimization in film uniformity[12] . This suggested the close connection between perovskite morphology and the performance of device. In this project, the correlation between CH3NH3PbBr3 morphology (particle size, thickness, and film coverage) and its opto-electronic properties has been investigated. Five different morphologies which were produced through different deposition conditions (variation in P123 surfactant (triblock poly(ethylene glycol)[PEG] - poly(propylene glycol)[PPG]-poly(ethylene glycol)[PEG]), CH3NH3PbBr3 concentration, toluene proportion, and anti-solvent (toluene) wash) has been characterized for their optical properties and electrical (device) performance. Optically, the samples with higher film coverage have shown significant increase in their absorption and emission intensity. This is attributable to the increase in CH3NH3PbBr3 active volume which participated in the optical activity. The device test has also shown improvement in CH3NH3PbBr3 electroluminescence performance due to lower defect (trap) sites and less electrical shunting loss, which is associated with bigger particles, higher film coverage and sufficient thickness. On the whole, morphological control of CH3NH3PbBr3 has been shown to result in considerable improvement in its opto-electronic properties. This finding provides insights for further improvement in the performance of perovskite based LED devices.
author2 Nripan Mathews
author_facet Nripan Mathews
Anson
format Final Year Project
author Anson
author_sort Anson
title Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
title_short Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
title_full Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
title_fullStr Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
title_full_unstemmed Correlating the morphology of emitter layer in perovskite based LED to its opto-electronic properties
title_sort correlating the morphology of emitter layer in perovskite based led to its opto-electronic properties
publishDate 2016
url http://hdl.handle.net/10356/66453
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