Reliability study and improvement of mass pro IR sensors and basic conception of 2D material based IR sensors
Recently, transition metal dichalcogenide (TMD) 2D material such as Molybdenum Disulfidel (MoS2) have be considerable as a candidate for next-generation of nanoelectronic devices due to its outstanding electrical and optical properties. 2D materials such as MoS2 have sizeable bandgap that change fro...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/67439 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Recently, transition metal dichalcogenide (TMD) 2D material such as Molybdenum Disulfidel (MoS2) have be considerable as a candidate for next-generation of nanoelectronic devices due to its outstanding electrical and optical properties. 2D materials such as MoS2 have sizeable bandgap that change from indirect to direct with the number of layers , this allow development new type of optical application such photodetector and electroluminescent devices. In this report, the way to grow MoS2 by using CVD was show and different characterization techniques such as Raman spectroscopy, Photoluminescence (PL) were used to determine the size, thickness and structure of the MoS2. The processes parameter such as temperature, time and gas flow were keep vary to obtain different recipes of MoS2. Library of MoS2 growth recipes can be obtain for different application. |
|---|