RF power amplifier IC design
Power amplifier is used to amplify signal to desired power level and are commonly used in series of communication devices. In software defined radio and high data-rate communications, wideband power amplifier with high PAE is generally required. In this report, relevant concepts on amplifier theory...
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sg-ntu-dr.10356-675142023-07-07T16:43:19Z RF power amplifier IC design Leonard Boon Chirn Chye School of Electrical and Electronic Engineering DRNTU::Engineering Power amplifier is used to amplify signal to desired power level and are commonly used in series of communication devices. In software defined radio and high data-rate communications, wideband power amplifier with high PAE is generally required. In this report, relevant concepts on amplifier theory, detail description of designs and results are presented. The power amplifier is designed in 65 nm CMOS with bandwidth from 1.8 to 5.85 GHz (fractional bandwidth of 124.8%). Different input and output matching circuit circuit enables the PA to achieve maximum PAE of 28.341% to 79.118%. The PA is also able to deliver gain of 14.546 to 19.784 dB. Furthermore, PA has maximum saturation power of 27.034 dBm. Bachelor of Engineering 2016-05-17T06:59:18Z 2016-05-17T06:59:18Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/67514 en Nanyang Technological University 75 p. application/pdf |
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DRNTU::Engineering Leonard RF power amplifier IC design |
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Power amplifier is used to amplify signal to desired power level and are commonly used in series of communication devices. In software defined radio and high data-rate communications, wideband power amplifier with high PAE is generally required.
In this report, relevant concepts on amplifier theory, detail description of designs and results are presented. The power amplifier is designed in 65 nm CMOS with bandwidth from 1.8 to 5.85 GHz (fractional bandwidth of 124.8%). Different input and output matching circuit circuit enables the PA to achieve maximum PAE of 28.341% to 79.118%. The PA is also able to deliver gain of 14.546 to 19.784 dB. Furthermore, PA has maximum saturation power of 27.034 dBm. |
| author2 |
Boon Chirn Chye |
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Boon Chirn Chye Leonard |
| format |
Final Year Project |
| author |
Leonard |
| author_sort |
Leonard |
| title |
RF power amplifier IC design |
| title_short |
RF power amplifier IC design |
| title_full |
RF power amplifier IC design |
| title_fullStr |
RF power amplifier IC design |
| title_full_unstemmed |
RF power amplifier IC design |
| title_sort |
rf power amplifier ic design |
| publishDate |
2016 |
| url |
http://hdl.handle.net/10356/67514 |
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