RF power amplifier IC design

• Main Author: Leonard
• Other Authors: Boon Chirn Chye
• Format: Final Year Project
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/67514
• Institution: Nanyang Technological University

Power amplifier is used to amplify signal to desired power level and are commonly used in series of communication devices. In software defined radio and high data-rate communications, wideband power amplifier with high PAE is generally required. In this report, relevant concepts on amplifier theory, detail description of designs and results are presented. The power amplifier is designed in 65 nm CMOS with bandwidth from 1.8 to 5.85 GHz (fractional bandwidth of 124.8%). Different input and output matching circuit circuit enables the PA to achieve maximum PAE of 28.341% to 79.118%. The PA is also able to deliver gain of 14.546 to 19.784 dB. Furthermore, PA has maximum saturation power of 27.034 dBm.