Characterization of antimony-based materials

This project involves the growth and optimization of the III-V antimony based materials including Indium Arsenide Antimonide (InAsSb) and Aluminum Gallium Antimonide (AlGaSb). The goal of this project is to optimize the MOCVD growth of InAsSb, GaSb, and AlGaSb films through different characterizatio...

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Main Author: Ho, Brenda Yeng Yeng
Other Authors: Zhang Dao Hua
Format: Final Year Project
Language:English
Published: 2016
Subjects:
Online Access:http://hdl.handle.net/10356/67519
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-675192023-07-07T15:41:49Z Characterization of antimony-based materials Ho, Brenda Yeng Yeng Zhang Dao Hua School of Electrical and Electronic Engineering Tang Xiaohong DRNTU::Engineering This project involves the growth and optimization of the III-V antimony based materials including Indium Arsenide Antimonide (InAsSb) and Aluminum Gallium Antimonide (AlGaSb). The goal of this project is to optimize the MOCVD growth of InAsSb, GaSb, and AlGaSb films through different characterization techniques. Several characterization techniques, such as SEM, AFM, XRD, PL, Hall measurement will be used to determine the optimal dopant concentration and III-V ratio so as to produce the ideal films. The factors affecting the growth of the films and the future research development will be discussed in this report as well. Bachelor of Engineering 2016-05-17T07:29:56Z 2016-05-17T07:29:56Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/67519 en Nanyang Technological University 56 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Ho, Brenda Yeng Yeng
Characterization of antimony-based materials
description This project involves the growth and optimization of the III-V antimony based materials including Indium Arsenide Antimonide (InAsSb) and Aluminum Gallium Antimonide (AlGaSb). The goal of this project is to optimize the MOCVD growth of InAsSb, GaSb, and AlGaSb films through different characterization techniques. Several characterization techniques, such as SEM, AFM, XRD, PL, Hall measurement will be used to determine the optimal dopant concentration and III-V ratio so as to produce the ideal films. The factors affecting the growth of the films and the future research development will be discussed in this report as well.
author2 Zhang Dao Hua
author_facet Zhang Dao Hua
Ho, Brenda Yeng Yeng
format Final Year Project
author Ho, Brenda Yeng Yeng
author_sort Ho, Brenda Yeng Yeng
title Characterization of antimony-based materials
title_short Characterization of antimony-based materials
title_full Characterization of antimony-based materials
title_fullStr Characterization of antimony-based materials
title_full_unstemmed Characterization of antimony-based materials
title_sort characterization of antimony-based materials
publishDate 2016
url http://hdl.handle.net/10356/67519
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