CMOS millimeter-wave transmitter design

As wireless communication is rapidly becoming an indispensable part of our life, the demand for low cost, highly integrated high data rate communication is increasing. CMOS technology appears to be the most promising option for low cost large volume production. However, CMOS integrated circuit has...

Full description

Saved in:
Bibliographic Details
Main Author: Lin, Jiafu
Other Authors: Boon Chirn Chye
Format: Theses and Dissertations
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/69183
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-69183
record_format dspace
spelling sg-ntu-dr.10356-691832023-07-04T16:13:01Z CMOS millimeter-wave transmitter design Lin, Jiafu Boon Chirn Chye School of Electrical and Electronic Engineering DRNTU::Engineering As wireless communication is rapidly becoming an indispensable part of our life, the demand for low cost, highly integrated high data rate communication is increasing. CMOS technology appears to be the most promising option for low cost large volume production. However, CMOS integrated circuit has several obstacles to achieve mass market adoption at the millimeter-wave frequency in terms of output power, efficiency and linearity etc. To tackle these challenges, a multi-dimensional solution involving several blocks has been proposed, which forms the basis of this thesis. We start by explaining the implementation of CMOS on-chip transformer and analysis of its application in the impedance matching network. A three-stage transformer-coupled power amplifier has been proposed with 16.4 dB small signal gain and a 3-dB bandwidth from 54.4 GHz to 66.3 GHz under 1.2 V supply voltage. The three-stage power amplifier exhibits a maximum output power of 11.8 dBm and a PAE of 11.2% in a compact size. To further improve the efficiency, ILPA (Injection Locking Power Amplifier) is investigated. A dual-mode ILPA with a wide injection locking bandwidth has been proposed. The dual-mode ILPA has a wide injection locking range from 50 GHz to 59 GHz, with a maximum gain of 36.5 dB at 54 GHz for the injection locking mode. In addition, a small signal gain of 14 dB and output 1-dB compression point of 9 dBm have been achieved in the linear mode. Finally, in order to achieve high efficiency transmission at the millimeter-wave frequency, an injection-locked transmitter has been studied. Moreover, a low power source-driven double balanced up-conversion mixer with an output 1-dB compression point of -11 dBm, conversion gain of -10 dB and LO leakage better than -43.1 dBc has been demonstrated. The demonstrated ILTX has achieved an output power of 11.48 dBm with an efficiency of 13.6 %. The transmitter has been tested with BPSK signal up to 1 GHz, with a LO power level of -6 dBm. The proposed ILTX can be employed in efficiency sensitive 60 GHz handheld applications. On-chip compact power combiner with high isolation of 28.3 dB at 40 GHz has also been demonstrated for further development of transmitter. All those proposed ideas and demonstrations can be employed in efficient CMOS millimeter circuit design. The measurement results have shown that cost economical and performance acceptable millimeter-wave CMOS solution is feasible. DOCTOR OF PHILOSOPHY (EEE) 2016-11-18T01:18:23Z 2016-11-18T01:18:23Z 2016 Thesis Lin, J. (2016). CMOS millimeter-wave transmitter design. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/69183 10.32657/10356/69183 en 153 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Lin, Jiafu
CMOS millimeter-wave transmitter design
description As wireless communication is rapidly becoming an indispensable part of our life, the demand for low cost, highly integrated high data rate communication is increasing. CMOS technology appears to be the most promising option for low cost large volume production. However, CMOS integrated circuit has several obstacles to achieve mass market adoption at the millimeter-wave frequency in terms of output power, efficiency and linearity etc. To tackle these challenges, a multi-dimensional solution involving several blocks has been proposed, which forms the basis of this thesis. We start by explaining the implementation of CMOS on-chip transformer and analysis of its application in the impedance matching network. A three-stage transformer-coupled power amplifier has been proposed with 16.4 dB small signal gain and a 3-dB bandwidth from 54.4 GHz to 66.3 GHz under 1.2 V supply voltage. The three-stage power amplifier exhibits a maximum output power of 11.8 dBm and a PAE of 11.2% in a compact size. To further improve the efficiency, ILPA (Injection Locking Power Amplifier) is investigated. A dual-mode ILPA with a wide injection locking bandwidth has been proposed. The dual-mode ILPA has a wide injection locking range from 50 GHz to 59 GHz, with a maximum gain of 36.5 dB at 54 GHz for the injection locking mode. In addition, a small signal gain of 14 dB and output 1-dB compression point of 9 dBm have been achieved in the linear mode. Finally, in order to achieve high efficiency transmission at the millimeter-wave frequency, an injection-locked transmitter has been studied. Moreover, a low power source-driven double balanced up-conversion mixer with an output 1-dB compression point of -11 dBm, conversion gain of -10 dB and LO leakage better than -43.1 dBc has been demonstrated. The demonstrated ILTX has achieved an output power of 11.48 dBm with an efficiency of 13.6 %. The transmitter has been tested with BPSK signal up to 1 GHz, with a LO power level of -6 dBm. The proposed ILTX can be employed in efficiency sensitive 60 GHz handheld applications. On-chip compact power combiner with high isolation of 28.3 dB at 40 GHz has also been demonstrated for further development of transmitter. All those proposed ideas and demonstrations can be employed in efficient CMOS millimeter circuit design. The measurement results have shown that cost economical and performance acceptable millimeter-wave CMOS solution is feasible.
author2 Boon Chirn Chye
author_facet Boon Chirn Chye
Lin, Jiafu
format Theses and Dissertations
author Lin, Jiafu
author_sort Lin, Jiafu
title CMOS millimeter-wave transmitter design
title_short CMOS millimeter-wave transmitter design
title_full CMOS millimeter-wave transmitter design
title_fullStr CMOS millimeter-wave transmitter design
title_full_unstemmed CMOS millimeter-wave transmitter design
title_sort cmos millimeter-wave transmitter design
publishDate 2016
url https://hdl.handle.net/10356/69183
_version_ 1772828677767168000