Development of the low cost transparent conductive thin films
Zinc Oxide (ZnO) - based transparent conductive oxide (TCO) thin films have attracted much attention to be an alternative choice instead of currently used Indium-tin-oxide (ITO) thin films in transparent electrode applications. However, it is not clear yet which dopant has the best performance on...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/69317 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Zinc Oxide (ZnO) - based transparent conductive oxide (TCO) thin films have
attracted much attention to be an alternative choice instead of currently used
Indium-tin-oxide (ITO) thin films in transparent electrode applications. However, it is
not clear yet which dopant has the best performance on the ZnO-based transparent
conductive thin films, and also there are limits on the development and practical
applications. This project is focused on development of low cost transparent
conductive thin film, from the economical and conductivity concern, the dopants
Galium (Ga) and Aluminium (Al) were chosen in the experiments for comparison.
The optimizations on these parameters: (1) no doping and doping concentration from
1.0 mole% to 2.0 mole% of ZnO solution; (2) spin-coating speed of the solution; (3)
numbers of coating layers; (4) annealing temperature were carried out for achieving
the best performance. |
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