Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors

In Nano-printing of electronic devices, one area of great interest is the One-dimensional (1D) nanostructured metal oxide semiconductors such as nanowires(NWs) and Nanorods. They have attracted great interest and research because of both their distinct characteristics and potential applications....

Full description

Saved in:
Bibliographic Details
Main Author: Ng, Ping Kee
Other Authors: Du Hejun
Format: Final Year Project
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/70923
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-70923
record_format dspace
spelling sg-ntu-dr.10356-709232023-03-04T18:59:48Z Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors Ng, Ping Kee Du Hejun School of Mechanical and Aerospace Engineering DRNTU::Engineering::Mechanical engineering In Nano-printing of electronic devices, one area of great interest is the One-dimensional (1D) nanostructured metal oxide semiconductors such as nanowires(NWs) and Nanorods. They have attracted great interest and research because of both their distinct characteristics and potential applications. For example, SnO2 Nanowires with a wide band gaps of 3.7eV have been widely studied because of their high quantum efficiency in the ultraviolet (UV) region. Huge amount of application has been done in optoelectric devices such as visible-blind photodetectors and solar cells. This report will demonstrate and experiment with the manufacturing processes of a simple photodetector device using an inkjet printer. Factors that govern the outcome and quality of the device such as substrate concentration and temperature of annealing will be considered. The device will undergo photocurrent, photoresponse and UV-Visible Absorption test to determine the quality of the product produced. SEM image will be used to see the surface of the device to spot for any cracks due to the annealing process. Thereafter, further research can be implemented to improve on the efficiency and quality of the device. Through a simple experimentation of trial and error, the result obtains from the photoresponse experiment demonstrated in this report shows that different ratio used in our mixture can significantly affect the quality and performance of the device. The SEM images in this report provide a microscopic view to the cracks propagated after the annealing process. This report hopes to demonstrate the possibility of producing a device using an inkjet printer. Bachelor of Engineering (Mechanical Engineering) 2017-05-12T04:19:59Z 2017-05-12T04:19:59Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70923 en Nanyang Technological University 44 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Mechanical engineering
spellingShingle DRNTU::Engineering::Mechanical engineering
Ng, Ping Kee
Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
description In Nano-printing of electronic devices, one area of great interest is the One-dimensional (1D) nanostructured metal oxide semiconductors such as nanowires(NWs) and Nanorods. They have attracted great interest and research because of both their distinct characteristics and potential applications. For example, SnO2 Nanowires with a wide band gaps of 3.7eV have been widely studied because of their high quantum efficiency in the ultraviolet (UV) region. Huge amount of application has been done in optoelectric devices such as visible-blind photodetectors and solar cells. This report will demonstrate and experiment with the manufacturing processes of a simple photodetector device using an inkjet printer. Factors that govern the outcome and quality of the device such as substrate concentration and temperature of annealing will be considered. The device will undergo photocurrent, photoresponse and UV-Visible Absorption test to determine the quality of the product produced. SEM image will be used to see the surface of the device to spot for any cracks due to the annealing process. Thereafter, further research can be implemented to improve on the efficiency and quality of the device. Through a simple experimentation of trial and error, the result obtains from the photoresponse experiment demonstrated in this report shows that different ratio used in our mixture can significantly affect the quality and performance of the device. The SEM images in this report provide a microscopic view to the cracks propagated after the annealing process. This report hopes to demonstrate the possibility of producing a device using an inkjet printer.
author2 Du Hejun
author_facet Du Hejun
Ng, Ping Kee
format Final Year Project
author Ng, Ping Kee
author_sort Ng, Ping Kee
title Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
title_short Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
title_full Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
title_fullStr Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
title_full_unstemmed Inkjet printing of zno-sno2 hybrid nanostructure for high performance UV photodetectors
title_sort inkjet printing of zno-sno2 hybrid nanostructure for high performance uv photodetectors
publishDate 2017
url http://hdl.handle.net/10356/70923
_version_ 1759858200848367616