System level simulation of a high power density point-of-load (POL) converters

With the advancement of technology, many people have moved away from the traditional means of information storage, and rely on cloud services. In order to meet the soaring demand of storage spaces, telecom servers and data centers have been growing at an alarming rate. The rapid expansion and contin...

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Main Author: Ang, Liang Sheng
Other Authors: Siek Liter
Format: Final Year Project
Language:English
Published: 2017
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Online Access:http://hdl.handle.net/10356/70926
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-709262023-07-07T17:04:11Z System level simulation of a high power density point-of-load (POL) converters Ang, Liang Sheng Siek Liter School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering With the advancement of technology, many people have moved away from the traditional means of information storage, and rely on cloud services. In order to meet the soaring demand of storage spaces, telecom servers and data centers have been growing at an alarming rate. The rapid expansion and continuous rising demand for higher-performance server technology, has inevitably been consuming large amount of electrical energy. With the intervention of rising energy prices and environmental awareness, drivers are shifting towards an efficient energy transmission and distribution. Point-of-load (POL) converters are one such technologies used within data centers’ system board to maximize system efficiency. It is used to step voltages down from 48V to 3.3V and below to operate the servers cards in the servers’ rack. While it is agreed that high power density and efficiency can be achieved by wide bandgap power devices like Gallium Nitride (GaN) transistors, the boundary is not known. Therefore, in this report, a system level of a non-isolated direct current to direct current (DC-DC) buck converter is studied. A basic converter loss model of synchronous current mode (SCM) modelling followed by an improved modelling will be presented to study the losses of a buck converter. From the SCM model, it is observed that the bulk of losses come from the low side of the GaN transistor, with an efficiency of 82.51% at switching frequency of 300KHz. An additional function of diode emulation mode (DEM) modelling is implemented to study the possibility of reducing the low side switching loss. The DEM is found more useful at lower switching frequency where efficiency is observed to improve slightly from 31.49% to 31.71% at 100KHz. Bachelor of Engineering 2017-05-12T04:23:48Z 2017-05-12T04:23:48Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70926 en Nanyang Technological University 95 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ang, Liang Sheng
System level simulation of a high power density point-of-load (POL) converters
description With the advancement of technology, many people have moved away from the traditional means of information storage, and rely on cloud services. In order to meet the soaring demand of storage spaces, telecom servers and data centers have been growing at an alarming rate. The rapid expansion and continuous rising demand for higher-performance server technology, has inevitably been consuming large amount of electrical energy. With the intervention of rising energy prices and environmental awareness, drivers are shifting towards an efficient energy transmission and distribution. Point-of-load (POL) converters are one such technologies used within data centers’ system board to maximize system efficiency. It is used to step voltages down from 48V to 3.3V and below to operate the servers cards in the servers’ rack. While it is agreed that high power density and efficiency can be achieved by wide bandgap power devices like Gallium Nitride (GaN) transistors, the boundary is not known. Therefore, in this report, a system level of a non-isolated direct current to direct current (DC-DC) buck converter is studied. A basic converter loss model of synchronous current mode (SCM) modelling followed by an improved modelling will be presented to study the losses of a buck converter. From the SCM model, it is observed that the bulk of losses come from the low side of the GaN transistor, with an efficiency of 82.51% at switching frequency of 300KHz. An additional function of diode emulation mode (DEM) modelling is implemented to study the possibility of reducing the low side switching loss. The DEM is found more useful at lower switching frequency where efficiency is observed to improve slightly from 31.49% to 31.71% at 100KHz.
author2 Siek Liter
author_facet Siek Liter
Ang, Liang Sheng
format Final Year Project
author Ang, Liang Sheng
author_sort Ang, Liang Sheng
title System level simulation of a high power density point-of-load (POL) converters
title_short System level simulation of a high power density point-of-load (POL) converters
title_full System level simulation of a high power density point-of-load (POL) converters
title_fullStr System level simulation of a high power density point-of-load (POL) converters
title_full_unstemmed System level simulation of a high power density point-of-load (POL) converters
title_sort system level simulation of a high power density point-of-load (pol) converters
publishDate 2017
url http://hdl.handle.net/10356/70926
_version_ 1772825855656984576