Synthesis and characterization of two-dimensional hexagonal boron nitride thin film

• Main Author: Naradha, I Made Wiswa
• Other Authors: Teo Hang Tong Edwin
• Format: Final Year Project
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/70996
• Institution: Nanyang Technological University

Hexagonal boron nitride (h-BN) is two-dimensional structured material that has a wide range of potential in future applications in graphene-based device electronics, optoelectronics, etc, which is attributed to its close lattice matching with graphene as well as its remarkable electrical and optical features. However, an effective and practicable method for the industry to produce a high-quality h-BN that is readily integrated into another device has yet to be demonstrated. This study proposes a relatively new method to synthesize a good-quality h-BN thin film directly on a dielectric substrate (sapphire) with the assistance of copper-vapor as a catalyst, which was adapted from similar method used to synthesize graphene. The growth process was based on atmospheric and low pressure chemical vapor deposition (APCVD and LPCVD) method. Direct growth of h-BN on dielectric substrate will path a way to simplify the device integration process of h-BN and also reduce any potential contaminants that was commonly encountered in the indirect growth process steps. In the end of this study, multilayer h-BN crystalline with crystallite size of ~36.7 nm and optical bandgap energy of ~5.44 eV was achieved. It was also successfully confirmed that the catalytic behavior of copper towards the decomposition reaction to produce h-BN is still retained in vapor-phase.