Modelling the electrical characteristics of SiNWs/organic solar cells

In recent decades, there is rising awareness for the needs of renewable energy to reduce the contribution of greenhouse gas to the atmosphere. However, the solar cells that are available in the market are still not commercially capable to substitute the conventional way of power generation such as f...

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Bibliographic Details
Main Author: Tay, Chiu Kee
Other Authors: Rusli
Format: Final Year Project
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/71900
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Institution: Nanyang Technological University
Language: English
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Summary:In recent decades, there is rising awareness for the needs of renewable energy to reduce the contribution of greenhouse gas to the atmosphere. However, the solar cells that are available in the market are still not commercially capable to substitute the conventional way of power generation such as fossil fuels, due to its high material cost and fabrication price. To address the cost issue, many materials have gained a lot of attention in research field and transition metal oxide is one of the materials that having properties that suitable for solar cell fabrication. To date, the characteristic of silicon heterojunction solar cells incorporated with transition metal oxide (Si/TMO) are still not well investigated. Hence the motivation of this project is to identify the optical and electrical characteristic of Si/TMO solar cell, which uses molybdenum oxide (MoOx), as the selective carrier contact material. The theoretical performance of the Si/MoOx solar cell is examined by using numerical semiconductor device simulation software, Silvaco ATLASTM . Whereas, the test subject used in experiment is planar Si/MoOx heterojunction solar cell, which is fabricated by e-beam evaporation, with indium tin oxide as an antireflection coating at the top layer grown by radio frequency sputtering. In the simulation, the thickness of MoOx and ITO are the variables, while in experiment, the changing parameters are the concentration of silicon doping and use of thin evaporated ITO as a barrier layer. To conclude, the simulated data is compared and investigated with the experimental result.