Silicon heterojunction solar cell based on organic and transition metal oxide selective carrier contact layer

Si heterojunction solar cells based on organic and transition metal oxide selective carrier contact layer are developed to bypass the high-temperature process required for the conventional Si solar cell. We investigated the behavior of n-Si/PEDOT:PSS inorganic-organic heterojunction which revealed a...

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Bibliographic Details
Main Author: Prakoso, Ari Bimo
Other Authors: Rusli
Format: Theses and Dissertations
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/72471
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Institution: Nanyang Technological University
Language: English
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Summary:Si heterojunction solar cells based on organic and transition metal oxide selective carrier contact layer are developed to bypass the high-temperature process required for the conventional Si solar cell. We investigated the behavior of n-Si/PEDOT:PSS inorganic-organic heterojunction which revealed a p-n junction characteristic in contradiction with Schottky junction model. Afterward, we developed a simulation model to optimize n-Si/PEDOT:PSS heterojunction solar cells. We propose the use of simple front junction PEDOT:PSS (30 nm) / Si3N4 (40 nm) layer that can achieve efficiency of 18.4% and more complicated interdigitated back contact design that can achieve 20.4%. We fabricate Si/molybdenum oxide heterojunction solar cell structure which can yield high short circuit current density of 34.3 mA/cm2 although the efficiency is limited to 11.6%. Moreover, we propose and analyze the potential of PV-Tower solar cell concept which can generate high power improvement factor over a small footprint.