Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications

• المؤلف الرئيسي: Yu, Bo
• مؤلفون آخرون: Ma Kaixue
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/72734
• المؤسسة: Nanyang Technological University

In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization techniqu...