Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications

In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization techniqu...

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Bibliographic Details
Main Author: Yu, Bo
Other Authors: Ma Kaixue
Format: Theses and Dissertations
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/72734
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Institution: Nanyang Technological University
Language: English