Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications
In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization techniqu...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2017
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/72734 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|