Highly lattice-mismatched epitaxy for III-V/Si integration
Indium antimonide (InSb) is a competitive semiconductor for the applications in high electron mobility transistor and mid-infrared photodetector. Integration of InSb on GaAs and Si substrates is promising for higher performance of the devices and lower cost of fabrication, and becomes an important...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/73266 |
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| Institution: | Nanyang Technological University |
| Language: | English |