High efficiency integrated III-V-nitride solar cells on silicon-based substrates
Solar energy has a huge potential to reduce the world’s reliance on fossil fuels. However, due to the excess current wasted by the Ge sub-cell, the energy conversion efficiency of a typical lattice-matched triple junction (InGaP/Ga(In)As/Ge) photovoltaic (PV) cell can only reach 41% under concentrat...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2018
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| 在線閱讀: | http://hdl.handle.net/10356/73332 |
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