Towards advanced flexible functional electrochemical metallization (ECM)-based reram devices
Driven by the innovation and growing demand for the information technologies, new non-volatile memory devices are needed to be scalable and capable with excellent performances. The electrochemical metallization (ECM)-based resistive switching random access memory (ReRAM) device, which is the most pr...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/73421 |
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| Institution: | Nanyang Technological University |
| Language: | English |