Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation
This Master of Engineering research project pertains to the analysis, design, and Integrated Circuit (IC) realization of a novel Class-E RF Power Amplifier (PA) capable of generating a variable-envelope output signal for Polar transmitters in Wireless Body Area Network (WBAN) with emphasis on high p...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/73512 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-73512 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-735122023-07-04T17:14:53Z Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation Liu, Qianqian Gwee Bah Hwee School of Electrical and Electronic Engineering Centre for Integrated Circuits and Systems DRNTU::Engineering::Electrical and electronic engineering This Master of Engineering research project pertains to the analysis, design, and Integrated Circuit (IC) realization of a novel Class-E RF Power Amplifier (PA) capable of generating a variable-envelope output signal for Polar transmitters in Wireless Body Area Network (WBAN) with emphasis on high power efficiencies. A Class-E RF PA with a novel digitally-controlled variable output matching network (OMN) is proposed. The PA is designed so that the ZVS condition can be achieved for high-efficiency operation. The OMN performs the Dynamic Load Modulation (DLM), and is controlled/varied directly by the digital Amplitude Modulation (AM) input signal without any need for a conventional supply modulator, thereby saving area and power dissipation. The OMN architecture design allows the use of on-chip inductors, as well as off-chip inductors including high Quality factor bond-wires to improve the efficiency. The proposed Class-E PA embodying the novel digitally-controlled variable OMN is designed using the TSMC CMOS 40 nm technology and benchmarked, based on the IEEE 802.15.6 standard for WBAN, against a reference state-of-the-art PA. The benchmarking shows that the proposed PA features a higher drain efficiency, while achieving a similar/comparable performance to that of the reference PA. Master of Engineering 2018-03-23T01:29:11Z 2018-03-23T01:29:11Z 2018 Thesis Liu, Q. (2018). Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation. Master's thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/73512 10.32657/10356/73512 en 122 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Electrical and electronic engineering |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Liu, Qianqian Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
description |
This Master of Engineering research project pertains to the analysis, design, and Integrated Circuit (IC) realization of a novel Class-E RF Power Amplifier (PA) capable of generating a variable-envelope output signal for Polar transmitters in Wireless Body Area Network (WBAN) with emphasis on high power efficiencies.
A Class-E RF PA with a novel digitally-controlled variable output matching network (OMN) is proposed. The PA is designed so that the ZVS condition can be achieved for high-efficiency operation. The OMN performs the Dynamic Load Modulation (DLM), and is controlled/varied directly by the digital Amplitude Modulation (AM) input signal without any need for a conventional supply modulator, thereby saving area and power dissipation. The OMN architecture design allows the use of on-chip inductors, as well as off-chip inductors including high Quality factor bond-wires to improve the efficiency.
The proposed Class-E PA embodying the novel digitally-controlled variable OMN is designed using the TSMC CMOS 40 nm technology and benchmarked, based on the IEEE 802.15.6 standard for WBAN, against a reference state-of-the-art PA. The benchmarking shows that the proposed PA features a higher drain efficiency, while achieving a similar/comparable performance to that of the reference PA. |
author2 |
Gwee Bah Hwee |
author_facet |
Gwee Bah Hwee Liu, Qianqian |
format |
Theses and Dissertations |
author |
Liu, Qianqian |
author_sort |
Liu, Qianqian |
title |
Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
title_short |
Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
title_full |
Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
title_fullStr |
Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
title_full_unstemmed |
Class-E RF power amplifier with a digitally-controlled output matching network for dynamic load modulation |
title_sort |
class-e rf power amplifier with a digitally-controlled output matching network for dynamic load modulation |
publishDate |
2018 |
url |
http://hdl.handle.net/10356/73512 |
_version_ |
1772827819415437312 |