Multi-valued logic synthesis for Resistive Random Access Memory (RERAM) based in-memory computing
In-memory computing is a growing field of research which involves storing and processing of data at the memory. Resistive random access memory devices (RERAM) are among the class of memories which enable in-memory computing. RERAM devices are known to implement the material implication operation....
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格式: | Theses and Dissertations |
語言: | English |
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2018
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在線閱讀: | http://hdl.handle.net/10356/76071 |
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機構: | Nanyang Technological University |
語言: | English |