Germanium substitution in CZTS solar cells

Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is a promising non-toxic and earth-abundant material for thin-film solar cells. However, progress in the efficiency of CZTS solar cells is hindered by a large VOC deficit. An effective way to improve the efficiency of CZTS devices is cation substitution, whi...

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Main Author: Goh, Daniel Yong Yi
Other Authors: Lydia Helena Wong
Format: Final Year Project
Language:English
Published: 2019
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Online Access:http://hdl.handle.net/10356/76715
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-767152023-03-04T15:34:30Z Germanium substitution in CZTS solar cells Goh, Daniel Yong Yi Lydia Helena Wong School of Materials Science and Engineering Energetics Research Institute DRNTU::Engineering::Materials Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is a promising non-toxic and earth-abundant material for thin-film solar cells. However, progress in the efficiency of CZTS solar cells is hindered by a large VOC deficit. An effective way to improve the efficiency of CZTS devices is cation substitution, which is the partial substitution of Cu, Zn and Sn with other elements to alleviate efficiency losses from antisite disorder and impurity phases. Recently, one focus has been on the substitution of Sn with Ge, but research has largely focused on the selenide and sulfoselenide, CZTSe and CZTSSe. In this study, the effect of the substitution of Sn with Ge on the crystal structure, morphology, EQE and J-V device characteristics of the pure sulfide CZTS is investigated. XRD results show that the 2θ values of the peaks shift to higher values, indicating incorporation of Ge into the crystal lattice of CZTS. SEM images suggest the formation of secondary phases for Ge substitution beyond 10%. EQE measurements show slightly improved charge collection at 5% Ge substitution, while J-V measurements of devices made from Ge-substituted CZTS show an increased VOC, JSC and fill factor (FF) at 5% Ge substitution which coincides with the peak efficiency for Ge substitution. The improved VOC is postulated to be due to the reduction of Sn-related antisite defects in the crystal lattice. The EQE and J-V device characteristics are then compared against Ge-substituted sulfoselenide CZTSSe devices. The highest efficiency of 6% for the sulfide CZTS is found to occur at 5% Ge, while the peak performance occurs at a higher 10% Ge for the sulfoselenide. Recommendations are made to correct the Ge loss found from EDS results and double cation substitution of Cd and Ge is proposed as a possible future study. Bachelor of Engineering (Materials Engineering) 2019-04-05T06:03:05Z 2019-04-05T06:03:05Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/76715 en Nanyang Technological University 45 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Goh, Daniel Yong Yi
Germanium substitution in CZTS solar cells
description Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is a promising non-toxic and earth-abundant material for thin-film solar cells. However, progress in the efficiency of CZTS solar cells is hindered by a large VOC deficit. An effective way to improve the efficiency of CZTS devices is cation substitution, which is the partial substitution of Cu, Zn and Sn with other elements to alleviate efficiency losses from antisite disorder and impurity phases. Recently, one focus has been on the substitution of Sn with Ge, but research has largely focused on the selenide and sulfoselenide, CZTSe and CZTSSe. In this study, the effect of the substitution of Sn with Ge on the crystal structure, morphology, EQE and J-V device characteristics of the pure sulfide CZTS is investigated. XRD results show that the 2θ values of the peaks shift to higher values, indicating incorporation of Ge into the crystal lattice of CZTS. SEM images suggest the formation of secondary phases for Ge substitution beyond 10%. EQE measurements show slightly improved charge collection at 5% Ge substitution, while J-V measurements of devices made from Ge-substituted CZTS show an increased VOC, JSC and fill factor (FF) at 5% Ge substitution which coincides with the peak efficiency for Ge substitution. The improved VOC is postulated to be due to the reduction of Sn-related antisite defects in the crystal lattice. The EQE and J-V device characteristics are then compared against Ge-substituted sulfoselenide CZTSSe devices. The highest efficiency of 6% for the sulfide CZTS is found to occur at 5% Ge, while the peak performance occurs at a higher 10% Ge for the sulfoselenide. Recommendations are made to correct the Ge loss found from EDS results and double cation substitution of Cd and Ge is proposed as a possible future study.
author2 Lydia Helena Wong
author_facet Lydia Helena Wong
Goh, Daniel Yong Yi
format Final Year Project
author Goh, Daniel Yong Yi
author_sort Goh, Daniel Yong Yi
title Germanium substitution in CZTS solar cells
title_short Germanium substitution in CZTS solar cells
title_full Germanium substitution in CZTS solar cells
title_fullStr Germanium substitution in CZTS solar cells
title_full_unstemmed Germanium substitution in CZTS solar cells
title_sort germanium substitution in czts solar cells
publishDate 2019
url http://hdl.handle.net/10356/76715
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