Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius.
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sg-ntu-dr.10356-77372020-06-01T11:25:33Z Aluminum nitride dielectric substrates with controlled porosity by reaction sintering Tok, Alfred Iing Yoong Boey, Freddy Yin Chiang School of Mechanical and Production Engineering DRNTU::Business The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius. Doctor of Philosophy (MPE) 2008-09-18T07:50:30Z 2008-09-18T07:50:30Z 2000 2000 Thesis http://hdl.handle.net/10356/7737 en Nanyang Technological University 288 p. application/pdf |
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DRNTU::Business Tok, Alfred Iing Yoong Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
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The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius. |
author2 |
Boey, Freddy Yin Chiang |
author_facet |
Boey, Freddy Yin Chiang Tok, Alfred Iing Yoong |
format |
Theses and Dissertations |
author |
Tok, Alfred Iing Yoong |
author_sort |
Tok, Alfred Iing Yoong |
title |
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
title_short |
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
title_full |
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
title_fullStr |
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
title_full_unstemmed |
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
title_sort |
aluminum nitride dielectric substrates with controlled porosity by reaction sintering |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/7737 |
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1681059782867288064 |