Aluminum nitride dielectric substrates with controlled porosity by reaction sintering

The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius.

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Main Author: Tok, Alfred Iing Yoong
Other Authors: Boey, Freddy Yin Chiang
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/7737
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-77372020-06-01T11:25:33Z Aluminum nitride dielectric substrates with controlled porosity by reaction sintering Tok, Alfred Iing Yoong Boey, Freddy Yin Chiang School of Mechanical and Production Engineering DRNTU::Business The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius. Doctor of Philosophy (MPE) 2008-09-18T07:50:30Z 2008-09-18T07:50:30Z 2000 2000 Thesis http://hdl.handle.net/10356/7737 en Nanyang Technological University 288 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Business
spellingShingle DRNTU::Business
Tok, Alfred Iing Yoong
Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
description The thesis solved the two problems exist in the sintering of AIN. The two problems are pure AIN does not sinter to fully densification, and the adverse formation of the spinel phase, AION, occurs above 1700 deg. celsius.
author2 Boey, Freddy Yin Chiang
author_facet Boey, Freddy Yin Chiang
Tok, Alfred Iing Yoong
format Theses and Dissertations
author Tok, Alfred Iing Yoong
author_sort Tok, Alfred Iing Yoong
title Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
title_short Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
title_full Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
title_fullStr Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
title_full_unstemmed Aluminum nitride dielectric substrates with controlled porosity by reaction sintering
title_sort aluminum nitride dielectric substrates with controlled porosity by reaction sintering
publishDate 2008
url http://hdl.handle.net/10356/7737
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