In-memory computing

This report presents state-of-the-art In-memory Computing (IMC) works using SRAM. A brief introduction of static random access memory (SRAM) operation will be explained by introducing an intuitive method to analyze the circuits. Several state-of-the-art ultra-low-power (ULP) SRAM design techniques a...

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Main Author: Chen, Yuzong
Other Authors: Kim Tae Hyoung
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/77770
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-777702023-07-07T15:56:25Z In-memory computing Chen, Yuzong Kim Tae Hyoung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This report presents state-of-the-art In-memory Computing (IMC) works using SRAM. A brief introduction of static random access memory (SRAM) operation will be explained by introducing an intuitive method to analyze the circuits. Several state-of-the-art ultra-low-power (ULP) SRAM design techniques and IMC works will be discussed. A simple SRAM circuit simulation is carried out using Cadence and the circuit works correctly as expected. Compared to other FYP works, this report aims to analyze research papers from top circuit conferences such as International Solid-State Circuit Conference (ISSCC) and journals such as IEEE Journal of Solid-State Circuits (JSSC). Bachelor of Engineering (Electrical and Electronic Engineering) 2019-06-06T04:52:49Z 2019-06-06T04:52:49Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77770 en Nanyang Technological University 52 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Chen, Yuzong
In-memory computing
description This report presents state-of-the-art In-memory Computing (IMC) works using SRAM. A brief introduction of static random access memory (SRAM) operation will be explained by introducing an intuitive method to analyze the circuits. Several state-of-the-art ultra-low-power (ULP) SRAM design techniques and IMC works will be discussed. A simple SRAM circuit simulation is carried out using Cadence and the circuit works correctly as expected. Compared to other FYP works, this report aims to analyze research papers from top circuit conferences such as International Solid-State Circuit Conference (ISSCC) and journals such as IEEE Journal of Solid-State Circuits (JSSC).
author2 Kim Tae Hyoung
author_facet Kim Tae Hyoung
Chen, Yuzong
format Final Year Project
author Chen, Yuzong
author_sort Chen, Yuzong
title In-memory computing
title_short In-memory computing
title_full In-memory computing
title_fullStr In-memory computing
title_full_unstemmed In-memory computing
title_sort in-memory computing
publishDate 2019
url http://hdl.handle.net/10356/77770
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