Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials

Transition metal dichalcogenides (TMDs) have received great attention since the discovery of the first two dimensional (2D) material (graphene) in 2004. Molybdenum disulfide (MoS2) has topped the research subjects due to its excellent electrical and optical properties such as high mobility, high the...

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Main Author: Zhao, Guangchao
Other Authors: Tay Beng Kang
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/78422
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-784222023-07-07T17:00:12Z Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials Zhao, Guangchao Tay Beng Kang School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering Transition metal dichalcogenides (TMDs) have received great attention since the discovery of the first two dimensional (2D) material (graphene) in 2004. Molybdenum disulfide (MoS2) has topped the research subjects due to its excellent electrical and optical properties such as high mobility, high thermal stability, and a moderate band gap around 1.8 eV for monolayer. These properties are crucial to achieve a low static power consumption and high On-Off ratio when applied to fabricate electronic devices. What is more important, when ultra-scaled down into nanometer, MoS2 devices can significantly overcome the short channel effect, which makes it possible to substitute silicon (Si) as the basic material in the integrated circuits industry, thus keeping up with the Moore’s law. In this thesis, wafer-scale monolayer MoS2 will first be synthesized by chemical vapor deposition (CVD). Second, the quality of the as-prepared MoS2 samples will be characterized by Raman spectroscopy and photoluminescence (PL). After that, MoS2 will be transferred onto Si substrates where hafnium oxide (HfO2) is previously deposited to form the isolation layer. Then standard micro-fabrication process including electron beam lithography (EBL) and atomic layer deposition (ALD) will be carried out to complete the fabrication of MoS2 field effect transistors (FETs). At last, several tests such as output characteristic and transfer characteristic need to be run to characterize the direct current (DC) performance of the transistors. Other key features to evaluate FETs including carrier mobility and subthreshold swing will also be extracted from the test results. Bachelor of Engineering (Electrical and Electronic Engineering) 2019-06-20T01:30:12Z 2019-06-20T01:30:12Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/78422 en Nanyang Technological University 53 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhao, Guangchao
Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
description Transition metal dichalcogenides (TMDs) have received great attention since the discovery of the first two dimensional (2D) material (graphene) in 2004. Molybdenum disulfide (MoS2) has topped the research subjects due to its excellent electrical and optical properties such as high mobility, high thermal stability, and a moderate band gap around 1.8 eV for monolayer. These properties are crucial to achieve a low static power consumption and high On-Off ratio when applied to fabricate electronic devices. What is more important, when ultra-scaled down into nanometer, MoS2 devices can significantly overcome the short channel effect, which makes it possible to substitute silicon (Si) as the basic material in the integrated circuits industry, thus keeping up with the Moore’s law. In this thesis, wafer-scale monolayer MoS2 will first be synthesized by chemical vapor deposition (CVD). Second, the quality of the as-prepared MoS2 samples will be characterized by Raman spectroscopy and photoluminescence (PL). After that, MoS2 will be transferred onto Si substrates where hafnium oxide (HfO2) is previously deposited to form the isolation layer. Then standard micro-fabrication process including electron beam lithography (EBL) and atomic layer deposition (ALD) will be carried out to complete the fabrication of MoS2 field effect transistors (FETs). At last, several tests such as output characteristic and transfer characteristic need to be run to characterize the direct current (DC) performance of the transistors. Other key features to evaluate FETs including carrier mobility and subthreshold swing will also be extracted from the test results.
author2 Tay Beng Kang
author_facet Tay Beng Kang
Zhao, Guangchao
format Final Year Project
author Zhao, Guangchao
author_sort Zhao, Guangchao
title Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
title_short Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
title_full Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
title_fullStr Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
title_full_unstemmed Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials
title_sort design, fabrication and characterization of integrated electronic devices based on wafer-scale 2d materials
publishDate 2019
url http://hdl.handle.net/10356/78422
_version_ 1772828660976320512