Development of perovskite-based light emitting diodes with improved stability
All-inorganic CsPbX3 (X = I, Br, Cl) perovskite quantum dots have recently been proven to show characteristics that enables it to be a highly suitable optoelectronic material. However, there is a pressing problem faced by the perovskite quantum dots involving the instability caused by the high deloc...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2019
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| Online Access: | http://hdl.handle.net/10356/78795 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | All-inorganic CsPbX3 (X = I, Br, Cl) perovskite quantum dots have recently been proven to show characteristics that enables it to be a highly suitable optoelectronic material. However, there is a pressing problem faced by the perovskite quantum dots involving the instability caused by the high delocalization of surface ions. To improve the stability of the perovskite quantum dots, a series of experiment is carried out.
The microwave irradiation and hot injection methods were used in the synthesis of the perovskite quantum dots. The photoluminescence and photoluminescence quantum yield of the purified quantum dots were obtained. The results show that all inorganic perovskite quantum dots are indeed highly suitable materials for optoelectronic purposes.
The type of ligand used in the synthesis of the perovskite nanocrystals is significant as it affects its stability. To improve stability, (3-aminopropyl)triethoxysilane (APTES) replaced Oleylamine (OM) in the synthesis procedure. By performing a temperature test, it was concluded that APTES significantly improved the stability of the perovskite quantum dots. |
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