A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique

This paper presents a low voltage low power high linearity quadrature mixer for software defined radio applications in a 90nm CMOS technology. A 7-dB improvement of input-referred 3rd-order intermodulation point (IIP3) is achieved by using a differential gm″ (the second derivation of transconductanc...

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Main Authors: Yeo, Kiat Seng, Wang, Keping, Ma, Kaixue, Ye, Wanxin, Zhang, Hao, Wang, Zhigong
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/79646
http://hdl.handle.net/10220/8417
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-796462020-03-07T13:24:43Z A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique Yeo, Kiat Seng Wang, Keping Ma, Kaixue Ye, Wanxin Zhang, Hao Wang, Zhigong School of Electrical and Electronic Engineering IEEE MTT-S International Microwave Symposium Digest (2012 : Montreal, Canada) DRNTU::Engineering::Electrical and electronic engineering This paper presents a low voltage low power high linearity quadrature mixer for software defined radio applications in a 90nm CMOS technology. A 7-dB improvement of input-referred 3rd-order intermodulation point (IIP3) is achieved by using a differential gm″ (the second derivation of transconductance) canceling technology. The negative value of gm″ in saturated pseudo differential transistor (PDT) is compensated by the positive value of PDT in subthreshold region. The even-order distortion is eliminated by differential PDTs. The mixer consumes a dc power of only 3.8mW under 1V supply. The conversion gain with 10 samples is 3.6∼7.2 dB in the frequency range of 0.3∼6 GHz. the IIP3 is 7.9∼12.3 dBm 0.3∼6 GHz, whereas the single-sideband noise figure (SSB NF) is 11.1∼14.7 dB. Accepted version 2012-08-23T03:21:18Z 2019-12-06T13:30:01Z 2012-08-23T03:21:18Z 2019-12-06T13:30:01Z 2012 2012 Conference Paper Wang, K., Ma, K., Ye, W., Yeo, K. S., Zhang, H., & Wang, Z. (2012). A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique. In 2012 IEEE MTT-S International Microwave Symposium Digest, pp.1-3. https://hdl.handle.net/10356/79646 http://hdl.handle.net/10220/8417 10.1109/MWSYM.2012.6258257 164849 en © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/MWSYM.2012.6258257]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yeo, Kiat Seng
Wang, Keping
Ma, Kaixue
Ye, Wanxin
Zhang, Hao
Wang, Zhigong
A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
description This paper presents a low voltage low power high linearity quadrature mixer for software defined radio applications in a 90nm CMOS technology. A 7-dB improvement of input-referred 3rd-order intermodulation point (IIP3) is achieved by using a differential gm″ (the second derivation of transconductance) canceling technology. The negative value of gm″ in saturated pseudo differential transistor (PDT) is compensated by the positive value of PDT in subthreshold region. The even-order distortion is eliminated by differential PDTs. The mixer consumes a dc power of only 3.8mW under 1V supply. The conversion gain with 10 samples is 3.6∼7.2 dB in the frequency range of 0.3∼6 GHz. the IIP3 is 7.9∼12.3 dBm 0.3∼6 GHz, whereas the single-sideband noise figure (SSB NF) is 11.1∼14.7 dB.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yeo, Kiat Seng
Wang, Keping
Ma, Kaixue
Ye, Wanxin
Zhang, Hao
Wang, Zhigong
format Conference or Workshop Item
author Yeo, Kiat Seng
Wang, Keping
Ma, Kaixue
Ye, Wanxin
Zhang, Hao
Wang, Zhigong
author_sort Yeo, Kiat Seng
title A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
title_short A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
title_full A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
title_fullStr A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
title_full_unstemmed A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
title_sort low voltage low power highly linear cmos quadrature mixer using transconductance cancellation technique
publishDate 2012
url https://hdl.handle.net/10356/79646
http://hdl.handle.net/10220/8417
_version_ 1681045161097822208