Hybrid-mode SRAM sense amplifiers : new approach on transistor sizing
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduces a completely different way of sizing the aspect ratio of the transistors on the data-path, hence realizing a current-voltage hybrid mode Sense Amplifier. Extensive post-layout simulations have prov...
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Main Authors: | , , |
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格式: | Article |
語言: | English |
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2010
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在線閱讀: | https://hdl.handle.net/10356/79962 http://hdl.handle.net/10220/6260 |
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機構: | Nanyang Technological University |
語言: | English |