Comments on “Negative capacitance effect in semiconductor devices”

• المؤلفون الرئيسيون: Ma, Jianguo, Yeo, Kiat Seng, Do, Manh Anh
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79966; http://hdl.handle.net/10220/6015
• المؤسسة: Nanyang Technological University

Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional equivalent circuit models of devices, such as MOSFET’s, MESFET’s, HEMT’s, and so o...