Comments on “Negative capacitance effect in semiconductor devices”

• Main Authors: Ma, Jianguo, Yeo, Kiat Seng, Do, Manh Anh
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/79966; http://hdl.handle.net/10220/6015
• 機構: Nanyang Technological University

Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional equivalent circuit models of devices, such as MOSFET’s, MESFET’s, HEMT’s, and so o...